Silicon-rich tunnel oxide formed by oxygen implantation for flas

Details Silicon-rich tunnel oxide formed by oxygen implantation for flas Silicon-rich tunnel oxide formed by oxygen implantation for flas

1996-03-26

1998-03-10

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 24, 437239, 437978, H01L 218247

Patent

active

057260702

ABSTRACT:
A process for forming an EEPROM having silicon rich tunnel oxide is disclosed. This oxide is used in the formation of flash EEPROMs and results in high tunneling current at low voltages. The oxide also results in EEPROMs having good endurance. A layer of silicon enriched with oxygen is formed between the substrate and the insulating layer separating the substrate from the floating gate.

REFERENCES:
patent: 4849248 (1989-07-01), Hashimoto
patent: 5298447 (1994-03-01), Hong
patent: 5371027 (1994-12-01), Walker et al.
H.E. Maes, J. Withers & G. Groeseneken, "Trends in Non-Volatile Memory Devices and Technologies", Solid State Devices, pp. 157-168 (1988).

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