Silicon rich refractory silicides as gate metal

Details Silicon rich refractory silicides as gate metal Silicon rich refractory silicides as gate metal

1980-08-18

1982-06-29

Robinson, Ellis P.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

357 23, 427 93, 428446, 428472, H01L 2348

Patent

active

043374760

ABSTRACT:
Silicon-rich silicides of titanium and tantalum have been found to be suitable for use as the gate metal in semiconductor integrated circuits replacing polysilicon altogether. Such silicon-rich silicides, formed by sintering a cosputtered alloy with silicon to metal ratio of three as in deposited film, are stable even on gate oxide. The use of these compounds leads to stable, low resistivity gates and eliminates the need for the high resistivity polysilicon gate.

REFERENCES:
patent: 4128670 (1978-12-01), Gaensslen
patent: 4180596 (1979-12-01), Crowder
patent: 4276557 (1981-06-01), Levinstein
patent: 4285761 (1981-08-01), Fatula
"Ohmic Contacts to Silicon", The Electrochemical Society, Inc., p. 166, 1969.
"Oxidation of Sputtered Molybdenum Silicide Thin Films", Applied Physics, Nov. 11, 1978, pp. 826, 827.

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