Silicon-rich low thermal budget silicon nitride for...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating

Reexamination Certificate

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C257S636000, C257S630000, C257S640000

Reexamination Certificate

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06940151

ABSTRACT:
A low-thermal budget, silicon-rich silicon nitride film may include a concentration of hydrogen in Si—H bonds being at least 1.5 times as great as a concentration of hydrogen in N—H bonds. The silicon nitride film suppresses boron diffusion in boron-doped devices when such devices are processed using high-temperature processing operations that conventionally urge boron diffusion. The low-thermal budget, silicon-rich silicon nitride film may be used to form spacers in CMOS devices, it may be used as part of a dielectric stack to prevent shorting in tightly packed SRAM arrays, and it may be used in BiCMOS processing to form a base nitride layer and/or nitride spacers isolating the base from the emitter. Furthermore the low-thermal budget, silicon-rich silicon nitride film may remain covering the CMOS structure while bipolar devices are being formed, as it suppresses the boron diffusion that results in boron penetration and boron-doped poly depletion.

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R. C. Budhani et al., Structural Order in Si-N and Si-N-O Films Prepared by Plasma Assisted Chemical Vapor Deposition Process, 5(4) J. Vac. Sci. Technol. A, 1644 (Jul./Aug. 1987).

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