Silicon-rich block copolymers to achieve unbalanced vias

Details Silicon-rich block copolymers to achieve unbalanced vias Silicon-rich block copolymers to achieve unbalanced vias

1998-12-18

2000-04-18

Picard, Leo P.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257507, 257509, 257510, 257528, 257758, 257759, H01L 2928, H01L 2348

Patent

active

060518693

ABSTRACT:
An integrated circuit and method for making it is described. The integrated circuit includes an insulating layer, formed within a trench that separates conductive elements of a conductive layer, that has a low dielectric constant. The insulating layer is convertible at least in part into a layer that is resistant to a plasma that may be used for a photoresist ashing step or to a solvent that may be used for a via clean step. Preferably the insulating layer comprises a silicon containing block copolymer that is convertible at least in part into a silicon dioxide layer. The silicon dioxide layer protects the remainder of the insulating layer from subsequent processing, such as photoresist ashing and via clean steps.

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