Silicon resistor with expansion plate electrode

Details Silicon resistor with expansion plate electrode Silicon resistor with expansion plate electrode

1996-11-15

1998-04-07

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257537, 257538, 257768, 257763, H01L 2900

Patent

active

057367787

ABSTRACT:
A high power resistor is formed of a wafer of silicon captured between two molybdenum electrodes. A P-I-N diode of ring shape or wafer shape is concentric with a silicon resistor and has surfaces which are coplanar with the silicon resistor to form a device having an integrated diode and resistor.

REFERENCES:
patent: 5021867 (1991-06-01), Przybysz
patent: 5070383 (1991-12-01), Sinar et al.
patent: 5652460 (1997-07-01), Kalb et al.

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