Silicon resistor having a very low temperature coefficient

Details Silicon resistor having a very low temperature coefficient Silicon resistor having a very low temperature coefficient

1979-07-03

1982-05-18

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29569R, 29576R, 148188, 148190, 338 7, 357 63, 357 64, 357 89, H01L 2122

Patent

active

043297749

ABSTRACT:
An ohmic resistor of the bulk resistance type having a large mass of semiconductor material and remarkably stable resistivity at the operating temperature is made up of a rectangular parallelepiped of silicon doped by at least two substances, one substance being of the acceptor type and the other being of the donor type. The resistor then has much higher stability within the temperature range of -50.degree. C. to +200.degree. C. A second substance of the donor type (consisting of caesium, for example, while the first consists of gold) permits a further improvement in stability.

REFERENCES:
patent: 3248677 (1966-04-01), Hunter et al.
patent: 3337793 (1967-08-01), Gibbons
patent: 3473976 (1969-10-01), Castrucci et al.
patent: 3484658 (1969-12-01), Komatsu
patent: 3683306 (1972-08-01), Bulthuis et al.
patent: 3711325 (1973-01-01), Hentzschel
patent: 3963523 (1976-06-01), Tanaka et al.

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