Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1976-11-18
1978-02-07
James, Andrew J.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
357 42, 357 51, 357 59, 357 49, 307304, H01L 2702, H01L 2712, H01L 2904
Patent
active
040729745
ABSTRACT:
A resistive device for use as a current feedback loop in an integrated CMOS shift register circuit is made of an island of polycrystalline silicon with a sheet resistivity of from 10.sup.6 to 10.sup.8 ohms per square. The polycrystalline silicon island has two contacts thereon fashioned in the manner of MOS source and drain contacts and a dummy polycrystalline silicon insulated gate contact thereon. The device structure is designed to be and is fully compatible with CMOS mesa processing. The method for making the device incorporates into the processing steps for CMOS manufacture the formation of polycrystalline silicon islands on the substrate along with monocrystalline silicon islands. In the process, the polycrystalline silicon island is doped, through source and drain mask openings, with impurities of the same conductivity type as that predominating in the polycrystalline silicon island.
REFERENCES:
patent: 3739238 (1973-06-01), Hara
patent: 3781831 (1973-12-01), Neugebauer
patent: 3950738 (1976-04-01), Hayashi et al.
patent: 3952325 (1976-04-01), Beale et al.
"Philips Technical Review," vol. 31, pp. 271-275, 1970.
Christoffersen H.
Cohen Donald S.
James Andrew J.
RCA Corp.
Williams R. P.
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