Silicon release coating, method of making same, and method...

Coating processes – Interior of hollow article coating

Reexamination Certificate

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C427S374100

Reexamination Certificate

active

08062704

ABSTRACT:
A method of making a release coating includes the following steps: forming a mixture that includes (a) solid components comprising (i) 20-99% silicon by weight and (ii) 1-80% silicon nitride by weight and (b) a solvent; applying the mixture to an inner portion of a crucible or graphite board adapted to form an ingot or wafer comprising silicon; and annealing the mixture in a nitrogen atmosphere at a temperature ranging from 1000 to 2000° C. The invention may also relate to release coatings and methods of making a silicon ingot or wafer including the use of a release coating.

REFERENCES:
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patent: 6491971 (2002-12-01), Costantini et al.
patent: 2005/0176218 (2005-08-01), Jonczyk et al.
patent: 2007/0034251 (2007-02-01), Jonczyk et al.
patent: 2009/0249999 (2009-10-01), Roligheten et al.
patent: 1739209 (2007-01-01), None
patent: 2004053207 (2004-06-01), None
patent: WO 2004/053207 (2004-06-01), None
Ramachandra Rao et al., “Nitride-bonded silicon nitride from slip-cast Si + Si3N4 compacts”, Journal of Materials Research, Materials Research Society, Feb. 1, 2002, pp. 386-395, vol. 17, No. 2.
European Search Report (EP 2025780) completed Feb. 23, 2010.

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