Silicon pressure sensor having a resistance layer of polycrystal

Details Silicon pressure sensor having a resistance layer of polycrystal Silicon pressure sensor having a resistance layer of polycrystal

1989-04-27

1991-01-08

Mintel, William

357 59, 357 51, 357 2, 357 60, H01L 2984

Patent

active

049840460

ABSTRACT:
The invention relates to a method of manufacturing a polycrystalline semiconductor resistance layer of silicon on a silicon body. First an insulating layer is formed on the silicon body and then a polycrystalline silicon layer is deposited. To the deposited polycrystalline silicon layer is applied a further polycrystalline silicon layer having a crystallite structure coarser with respect to that of the first polycrystalline silicon layer. The two polycrystalline silicon layers are additionally doped. The invention further relates to a silicon pressure sensor having such a resistance layer.

REFERENCES:
patent: 4234889 (1980-11-01), Raymond, Jr. et al.
patent: 4426768 (1984-01-01), Black et al.
patent: 4672354 (1987-06-01), Kurtz et al.
patent: 4672411 (1987-06-01), Shimizu et al.
No Author, "Micromechanical Sensor for Linear and Angular Accelerations", IBM Technical Disclosure Bulletin, vol. 32, No. 8A, Jan. 1990, pp. 286-289.

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