Silicon pressure sensor

Details Silicon pressure sensor Silicon pressure sensor

1980-04-14

1982-02-23

Edlow, Martin H.

Electrical resistors

Incased, embedded, or housed

Element in insulation with outer metallic sheath

357 55, 357 60, 338 4, H01L 2984

Patent

active

043171265

ABSTRACT:
A monolithic silicon pressure sensor employing a four-terminal resistive element is formed in a thin monocrystalline silicon diaphragm. The resistive element is a diffused resistor having current contacts at the ends and two voltage contacts located midway between the current contacts and on opposite sides of a current axis defined between the two current contacts. The thin silicon diaphraghm has a square shape and is oriented in a (100) silicon surface with its sides parallel to a [110] crystal orientation. The resistor is oriented with its current axis parallel to a [100] crystalline direction and at 45 degrees with respect to the edge of the diaphragm to maximize sensitivity of the resistor to shear stresses generated by flexure of the diaphragm resulting from pressure differentials across the diaphragm. With a current flowing between current contacts, a shear stress acting on the resistor generates a voltage which appears at the voltage contacts and which is proportional to the magnitude of the shear stress.

REFERENCES:
patent: 3918019 (1975-11-01), Nunn
patent: 3968466 (1976-07-01), Nakamura
patent: 3994009 (1976-11-01), Hartlaub
patent: 4204185 (1980-05-01), Kurtz
patent: 4275406 (1981-06-01), Muller et al.
Pfann et al., Journ. of Appl. Phys., vol. 32, No. 10, Oct. 1961, pp. 2008-2019.

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