Electrical connectors – With insulation other than conductor sheath – Plural-contact coupling part
Reexamination Certificate
2006-07-27
2008-08-19
Geyer, Scott B. (Department: 2812)
Electrical connectors
With insulation other than conductor sheath
Plural-contact coupling part
C257SE21532
Reexamination Certificate
active
07413480
ABSTRACT:
In order to form a more stable silicon pillar which can be used for the formation of vertical transistors in DRAM cells, a multi-step masking process is used. In a preferred embodiment, an oxide layer and a nitride layer are used as masks to define trenches, pillars, and active areas in a substrate. Preferably, two substrate etch processes use the masks to form three levels of bulk silicon.
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Geyer Scott B.
Knobbe Martens Olson & Bear LLP
Micro)n Technology, Inc.
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