Silicon photosensitive element

Details Silicon photosensitive element Silicon photosensitive element

1995-10-02

1998-10-06

Hoang, Tu B.

Electrical resistors

Resistance value responsive to a condition

Photoconductive

357 30, 357 42, H01L 3108

Patent

active

058183221

ABSTRACT:
A groove is formed on the surface of a silicon substrate by way of etching. A silicon device for a driver of a photosensitive element is formed on the surface of the substrate where the groove is not formed. With the groove, a super lattice structure of Si and Si.sub.1-x Ge.sub.x is buried to form a photosensing portion. The photosensing portion is formed with an avalanche photodiode or a PIN diode. The photosensing portion is formed to have no step with the surface of the substrate. On the other hand, SOI silicon oxide layer is provided on the back side of the substrate to form the structure of SOI substrate. BY this, a photo reflection layer of SiO.sub.2 layer is provided below the photosensing portion. Thus, a silicon type photosensing element and the silicon device for driver can be formed on a common chip simultaneously for reducing production cost and for improving sensitivity and photo converting efficiency of the photosensing element.

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