Silicon penetration device with increased fracture toughness...

Coating processes – With pretreatment of the base – Etching – swelling – or dissolving out part of the base

Reexamination Certificate

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C427S314000, C427S398100, C216S002000, C216S099000

Reexamination Certificate

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06852365

ABSTRACT:
A silicon penetration device with increased fracture toughness and method of fabrication thereof are provided. The method comprises strengthening silicon penetration devices by thermally growing a silicon oxide layer on the penetration device and then subsequently stripping the silicon oxide. The method also includes strengthening silicon penetration devices through the sputtering of thin film coatings on the silicon penetration devices.

REFERENCES:
patent: 3628983 (1971-12-01), Leger et al.
patent: 4985368 (1991-01-01), Ishii et al.
patent: 5238871 (1993-08-01), Sato
patent: 6066265 (2000-05-01), Galvin et al.
patent: 6139759 (2000-10-01), Doezema et al.

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