Silicon package for piezoelectric device

Details Silicon package for piezoelectric device Silicon package for piezoelectric device

2006-06-13

2006-06-13

Smith, Matthew (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With semiconductor element forming part

Reexamination Certificate

active

07061086

ABSTRACT:
A hermetic package for electronic components which is made of metallic silicon is disclosed. The package creates a cavity for receiving the electronic component, preferably a piezoelectric device, which provides a evacuated environment in the range of 1×10−5to 1×10−11torr. In a first embodiment, the single crystal metallic silicon is p-doped to make it electrically conductive, obviating the need for lead wires which could compromise the hermeticity of the package. Silicon-to-silicon bonding is preferably accomplished using brazing of the cover to the base member using gold indium eutectic alloy at 495° C. A method of making a surface mountable electronic component having an internal hermetic environment is also described.

REFERENCES:
patent: 4288284 (1981-09-01), Kobayashi et al.
patent: 4404459 (1983-09-01), Harton
patent: 4785137 (1988-11-01), Samuels
patent: 5198716 (1993-03-01), Godshall et al.
patent: 5339051 (1994-08-01), Koehler et al.
patent: 6806557 (2004-10-01), Ding

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