Silicon oxynitride storage node dielectric

Details Silicon oxynitride storage node dielectric Silicon oxynitride storage node dielectric

1986-09-08

1988-02-16

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG3, 148DIG13, 148DIG14, 148DIG114, 437243, 437247, 437919, 437 86, 437 28, H01L 21265

Patent

active

047255609

ABSTRACT:
An annealing process carried out at 800.degree. C. in a wet O.sub.2 ambient permits the manufacture of a reliable storage capacitor wherein the dielectric layer is comprised of silicon oxynitride formed by low pressure chemical vapor deposition (LPCVD). The manufacturing process includes first depositing the silicon oxynitride film by LPCVD, second annealing in wet O.sub.2 at 800.degree. C. or N.sub.2 at 1000.degree. C., third forming an N-type region in the silicon substrate by As.sup.+ ion implantation through the silicon oxynitride film, fourth annealing in wet O.sub.2 at 800.degree. C., and fifth depositing an electrode.

REFERENCES:
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patent: 4363868 (1982-12-01), Takasaki et al.
patent: 4621277 (1986-11-01), Ito et al.
Pan et al., "Properties of Thin LPCVD Silicon Oxynitride Films, " J. Electronic Matls., vol. 14, No. 5, Sep. 1985, pp. 617-632.
Remmerie et al., "Physical and Electrical Characterization of LPCVD Oxynitride Layers, " Insulating Films on Semiconductors, 1985.
Gaind et al., "Physiochemical Properties of Chemical Vapor-Deposited Silicon Oxynitride from a SiH.sub.4 --CO.sub.2 --NH.sub.3 --H.sub.2 System," J. Electrochem. Soc., vol. 125, No. 1, pp. 139-145, Jan. 1978.

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