Coating processes – Electrical product produced – Welding electrode
Patent
1984-07-02
1985-09-24
Williams, Howard S.
Coating processes
Electrical product produced
Welding electrode
427 35, B05D 314
Patent
active
045432716
ABSTRACT:
An improved silicon oxynitride material which is homogeneously chemically bonded and contains minimal free amorphous silicon has improved electrical insulating properties, hardness, scratch resistance, and adhesion. This material is formed on the surface of a selected substrates by a photochemical vapor deposition reaction. First a vapor mixture is formed comprising: ammonia and silane reactants in the ratio of 80:1 or higher; mercury vapors as a sensitizer for the desired photochemical reaction; and a predetermined amount of oxygen. This vapor mixture is introduced into a photochemical vapor deposition chamber containing the selected substrate, and radiation of a predetermined wavelength is simultaneously introduced into the deposition chamber. The selected radiation induces a photochemical reaction between the silane, ammonia, and oxygen to form silicon oxynitride which deposits on the substrate surface. The oxygen reacts with any excess silane to chemically bond and homogeneously incorporate the silicon from the excess silane into the silicon oxynitride material. Thus, the formation of free amorphous silicon from the silane and the heterogeneous incorporation thereof into the silicon oxynitride material are prevented.
REFERENCES:
patent: 4181751 (1980-01-01), Hall et al.
patent: 4282270 (1981-08-01), Nozaki et al.
patent: 4289797 (1981-09-01), Akselrad
patent: 4363868 (1982-12-01), Takasaki et al.
patent: 4371587 (1983-02-01), Peters
Rand et al., "Silicon Oxynitride Films from the NO--NH.sub.3 --SiH.sub.4 Reaction" J. Electrochem. Soc., vol. 120, No. 3, Mar. 1973, pp. 446-453.
Hughes Aircraft Company
Karambelas A. W.
Lachman Mary E.
Williams Howard S.
LandOfFree
Silicon oxynitride material and photochemical process for formin does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Silicon oxynitride material and photochemical process for formin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon oxynitride material and photochemical process for formin will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1613733