Optical waveguides – Having particular optical characteristic modifying chemical... – Of waveguide core
Reexamination Certificate
2006-05-09
2006-05-09
Healy, Brian (Department: 2883)
Optical waveguides
Having particular optical characteristic modifying chemical...
Of waveguide core
C385S129000, C385S130000, C385S131000, C385S141000, C065S385000, C065S386000
Reexamination Certificate
active
07043133
ABSTRACT:
Silicon-oxycarbide optical waveguides and thermooptic devices include a substrate and a first cladding layer having a first refractive index positioned over a substrate. A first core layer comprising silicon, oxygen, and carbon and having a core refractive index is formed on the first cladding layer by chemical vapor deposition using at least two precursors: one inorganic silicon precursor gas and at least one second precursor gas comprising carbon and oxygen. Alternatively, at least three precursors can be used: one inorganic silicon precursor gas, a second precursor comprising carbon, and a third precursor comprising oxygen. The core layer is lithographically patterned to define waveguide elements. A second cladding layer having a second cladding refractive index is formed to surround the optical core waveguiding element of the first core layer.
REFERENCES:
patent: 4138194 (1979-02-01), Beasley et al.
patent: 4384038 (1983-05-01), Khoe et al.
patent: RE31868 (1985-04-01), Beasley et al.
patent: 4583997 (1986-04-01), Staudigl
patent: 4689065 (1987-08-01), Krause
patent: 4863236 (1989-09-01), Herbrechtsmeier et al.
patent: 4871221 (1989-10-01), Imoto
patent: 5053244 (1991-10-01), Kieser et al.
patent: 5059475 (1991-10-01), Sun et al.
patent: 5062680 (1991-11-01), Imamura et al.
patent: 5122431 (1992-06-01), Kodama et al.
patent: 5175790 (1992-12-01), Groh et al.
patent: 5196041 (1993-03-01), Tumminelli et al.
patent: 5295220 (1994-03-01), Heming et al.
patent: 5323482 (1994-06-01), Stewart et al.
patent: 5332827 (1994-07-01), Stewart et al.
patent: 5385594 (1995-01-01), Kanamori et al.
patent: 5503650 (1996-04-01), Ishikawa et al.
patent: 5547706 (1996-08-01), Ackerman
patent: 5588083 (1996-12-01), Boonstra et al.
patent: 5593741 (1997-01-01), Ikeda
patent: 5672672 (1997-09-01), Amano et al.
patent: 5688896 (1997-11-01), Boonstra et al.
patent: 5844363 (1998-12-01), Gu et al.
patent: 5872387 (1999-02-01), Lyding et al.
patent: 5949945 (1999-09-01), Okano et al.
patent: 5972765 (1999-10-01), Clark et al.
patent: 5979188 (1999-11-01), Ojha
patent: 6023093 (2000-02-01), Gregor et al.
patent: 6025280 (2000-02-01), Brady et al.
patent: 6077791 (2000-06-01), DeTar
patent: 6122934 (2000-09-01), Narita et al.
patent: 6144795 (2000-11-01), Dawes et al.
patent: 6154582 (2000-11-01), Bazylenko et al.
patent: 6160945 (2000-12-01), Rhee et al.
patent: 6192712 (2001-02-01), Saito et al.
patent: 6211065 (2001-04-01), Xi et al.
patent: 6233381 (2001-05-01), Borrelli et al.
patent: 6434318 (2002-08-01), Bischel et al.
patent: 6593655 (2003-07-01), Loboda et al.
patent: 6614977 (2003-09-01), Johnson et al.
patent: 6627532 (2003-09-01), Gaillard et al.
patent: 6768828 (2004-07-01), Gill et al.
patent: 6771868 (2004-08-01), Johnson et al.
patent: 6832026 (2004-12-01), Carter et al.
patent: 6888990 (2005-05-01), Block et al.
patent: 6920159 (2005-07-01), Sidorin et al.
patent: 2002/0154878 (2002-10-01), Akwani et al.
patent: 2004/0008968 (2004-01-01), Lee et al.
patent: 2004/0086643 (2004-05-01), Onozawa et al.
patent: 2005/0031284 (2005-02-01), Blalock et al.
patent: WO 01/64594 (2001-09-01), None
patent: WO 02/35265 (2002-05-01), None
G. Grand, J.P. Jadot, H. Denis, S. Valette, A. Fournier, and A.M. Grouillet, “Low-Loss PECVD Silica Chanel Waveguides For Optical Communications”, Electronic Letters, vol. 26, No. 25, pp. 2135-2137, Dec. 6, 1990.
J. Yeh, and S. Lee, “Structural and Optical Properties of Amorphous Silicon Oxynitride”, J. Appl. Phys. vol. 79, No. 2, pp. 656-663, Jan. 15, 1996.
A. Shih, J. Yeh, S. Lee, and T.R. Yang, “Structural and Electronic Differences Between Deuterated and Hydrogenated Amorphous Silicon”, J. Appl. Phys. vol. 88, No. 3, pp. 1684-1687, Aug. 1, 2000.
J. Yota, J. Hander, and A.A. Saleh, “A Comparative Study on Inductively-Coupled Plasma High-Density Plasma, Plasma-Enhanced, and Low Pressure Chemical Vapor Deposition Silicon Nitride Films”, J. Vac. Sci. Technol. A., vol. 18, No. 2, pp. 372-376, Mar./Apr. 2000.
L. Martinu, and D. Poitras, “Plasma Deposition of Optical Films and Coatings: A Review”, J. Vac. Sci. Technol. A vol. 18, No. 6, pp. 2619-2645, Nov./Dec. 2000.
R. Germann, H.W.M. Salemink, R. Beyeler, F. Horst, I. Massarek, and B.J. Offrein, “Silicon Oxynitride Layers for Optical Waveguide Applications”, J. Electrochemical Society, vol. 147, No. 6, pp. 2237-2241, 2000.
T. Watanabe, N. Ooba, S. Hayashida, T. Kurihara, and S. Imamura, “Polymeric Optical Waveguide Circuits Formed Using Silicone Resin”, J. Lightwave Technology, vol. 16, No. 6, pp. 1049-1055, Jun. 1998.
Bona, et al., “SiON high-refractive-index waveguide and planar lightwave circuits”, IBM Journal Research & Development, vol. 47, No. 2/3, 2003.
Kim et al. “Characterization of low-dielectric-constant SiOC thin films deposited by PECVD for interlayer dielectrics of multilevel interconnection” Surface and Coatings Technology, vol. 171, pp. 39-45 (2003).
Berk Warren P.
Davidson Timothy J.
Gill David M.
Johnson Frederick G.
King Oliver S.
DLA Piper Rudnick Gray Cary US LLP
Healy Brian
Little Optics Inc.
Peng Charlie
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