Silicon oxycarbide, growth method of silicon oxycarbide...

Details Silicon oxycarbide, growth method of silicon oxycarbide... Silicon oxycarbide, growth method of silicon oxycarbide...

2005-09-27

2005-09-27

Parekh, Nitin (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S758000, C257S759000, C257S774000

Reexamination Certificate

active

06949830

ABSTRACT:
A semiconductor device including an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of O2to bring the surface more hydrophilic. Film peel-off and cracks in the interlayer insulating layer decrease.

REFERENCES:
patent: 6593655 (2003-07-01), Loboda et al.
patent: 6664641 (2003-12-01), Ohsaki et al.
patent: 6737746 (2004-05-01), Matsuura
patent: 2003/0134505 (2003-07-01), Dalton et al.
patent: 2003-218109 (2003-07-01), None

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