Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2006-10-03
2006-10-03
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S325000, C257S411000, C257S632000, C257S639000, C257S760000
Reexamination Certificate
active
07115974
ABSTRACT:
In the preferred embodiment, a gate dielectric and an electrode are formed on a substrate. A pair of spacers is formed along opposite sidewalls of the gate electrode and the gate dielectric. Spacers are preferably formed of SiCO based material or SiCN based material. The source and drain are then formed. A contact etch stop (CES) layer is formed on the source/drain regions and the spacers. The CES layer is preferably formed of SiCO based material or SiCN based material. An Inter-Level Dielectric (ILD) is then formed on the CES layer.
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Rim, K., “Strained Silicon and SOI: Complementary Technologies,” Solid State Technology, WaferNEWS, http://sst.pennnet.com/Articles/Article—Display.cfm?Section=ARTCL&ARTICLE—ID=182802&VERSION—NUM=1&p=5.
Chang Weng
Cheng Shwang-Ming
Liang Mong Song
Lin Da-Wen
Tsai Hung Chun
Flynn Nathan J.
Slater & Matsil L.L.P.
Taiwan Semiconductor Manfacturing Company, Ltd.
Wilson Scott R.
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