Silicon oxide/silicon nitride mask with improved integrity for s

Details Silicon oxide/silicon nitride mask with improved integrity for s Silicon oxide/silicon nitride mask with improved integrity for s

1976-09-07

1978-05-23

Robinson, Ellis P.

Stock material or miscellaneous articles

Composite

Of quartz or glass

428323, 428446, 427122, 427 94, 148187, B32B 1706

Patent

active

040911691

ABSTRACT:
A semiconductor dielectric layer formed of silicon nitride having a uniform dispersion of carbon therein for providing reduced intrinsic tensile stresses of less than 10 .times. 10.sup.9 dyn/cm.sup.2.

REFERENCES:
patent: B581564 (1976-03-01), Jacobson
patent: 3503798 (1970-03-01), Yoshioka
patent: 3520722 (1970-07-01), Scott
patent: 3549411 (1970-12-01), Bean
patent: 3574677 (1971-04-01), Pammer
patent: 3637423 (1972-01-01), Sestrich
patent: 3652324 (1972-03-01), Chu
patent: 3652331 (1972-03-01), Yamazaki
patent: 3874919 (1975-04-01), Lehman

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