Silicon oxide resonant tunneling diode structure

Details Silicon oxide resonant tunneling diode structure Silicon oxide resonant tunneling diode structure

1994-12-06

1997-02-25

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 17, 257 22, 257 28, H01L 2988

Patent

active

056061773

ABSTRACT:
A resonant tunneling diode (400) made of a silicon quantum well (406) with silicon oxide tunneling barriers (404, 408). The tunneling barriers have openings (430) of size smaller than the electron wave packet spread to insure crystal alignment through the diode without affecting the tunneling barrier height, and the openings (430) have an irregular (nonperiodic) shape.

REFERENCES:
patent: 4471471 (1984-09-01), DiMaria
patent: 5216262 (1993-06-01), Tsu
patent: 5229623 (1993-07-01), Tauoue
patent: 5352330 (1994-08-01), Wallace

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