Silicon oxide removal in semiconductor processing

Details Silicon oxide removal in semiconductor processing Silicon oxide removal in semiconductor processing

1996-02-06

1997-06-03

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 88, 216 79, 252 794, 438743, 438697, H01L 2100, C09K 1306

Patent

active

056350228

ABSTRACT:
The present invention provides methods of removing or etching silicon oxide from a semiconductor wafer by contacting the silicon oxide with diorganocarbonates, including comprising hydrocarbyl groups that are either aliphatic, aromatic, or a combination thereof. The diorganocarbonate can include (C.sub.1 -C.sub.10)hydrocarbyl groups. Specific examples of useful diorganocarbonates include dimethylcarbonate, diethylcarbonate, dipropylcarbonate, diisopropylcarbonate, and dibutylcarbonate.

REFERENCES:
patent: 4582624 (1986-04-01), Enjo et al.
Ono et al., "Direct Transformation of Silica into Alkoxysilanes by Gas-Solid Reactions", J. Chem. Soc. Chem. Commun., No. 2, pp. 136-137, (1992).
Rosenheim et al., "Zeitschrift fur anorganische und allgemeine Chemie", Z. Anorg. Allg. Chem., Band 196, pp. 160-176, (1931).
Boudin et al., "Reactivity of Dianionic Hexacoordinated Silicon Complexes toward Nucleophiles: A New Route to Organosilanes from Silica", Organometallics, 7, pp. 1165-1171, (1988).
Boudin et al., "Reactivity of hypervalent silicon derivatives. One step synthesis of mono--and di-hydrogenosilanes", j. Organomet. Chem., 362, pp. 265-272, (1989).
Wolf et al., "Silicon Processing for the VLSI Era.", vol. 1, Copyright (1986), Table of Contents pp. xi-xx.

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