Silicon oxide layer reduced in dangling bonds through...

Details Silicon oxide layer reduced in dangling bonds through... Silicon oxide layer reduced in dangling bonds through...

2005-05-24

2005-05-24

Nguyen, Ngoc-Yen (Department: 1754)

Chemistry of inorganic compounds

Silicon or compound thereof

Oxygen containing

C423S266000, C423S274000, C438S585000, C438S778000, C428S446000

Reexamination Certificate

active

06896861

ABSTRACT:
Dangling bonds of silicon atoms tend to take place in silicon oxide grown on a silicon wafer due to oxygen deficiency; hypofluorous acid is introduced into the silicon oxide so that the hypofluorous acid reaches the dangling bonds through diffusion; the hypofluorous acid is decomposed into fluorine atoms and hydroxyl groups, and the fluorine atoms and hydroxyl groups deactivate the dangling bonds of silicon atoms; even if electric charges are injected into the silicon oxide, the deactivation is never broken so that the silicon oxide layer is stable and highly reliable.

REFERENCES:
patent: 5554570 (1996-09-01), Maeda et al.
patent: 6383346 (2002-05-01), Ando et al.
patent: 6703302 (2004-03-01), Miyajima et al.
patent: 20030037568 (2003-02-01), Fujiwara et al.
patent: 20030195107 (2003-10-01), Ikuta et al.
patent: 20030214040 (2003-11-01), Yamashita et al.

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