Semiconductor device manufacturing: process – With measuring or testing – Optical characteristic sensed
Reexamination Certificate
2005-05-10
2005-05-10
Wilson, Christian (Department: 2824)
Semiconductor device manufacturing: process
With measuring or testing
Optical characteristic sensed
C438S014000, C438S778000, C438S779000, C438S787000
Reexamination Certificate
active
06890776
ABSTRACT:
A silicon oxide film formed on a compound semiconductor substrate is evaluated by estimating the quantity of silicon-silicon bonds operating as electron traps in the silicon oxide film from a peak with a wave number of 880/centimeter in the Fourier-transform infrared spectrum of the silicon oxide film. This peak, which is an indicator of silicon-silicon stretching vibration, provides an index of expected power performance degradation during operation of field-effect transistors incorporating the silicon oxide film as an interlayer. Power degradation can be reduced by fabricating the semiconductor device under conditions that reduce the estimated quantity of silicon-silicon bonds, without the need to measure the power degradation.
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Rabin & Berdo P.C.
Wilson Christian
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