Silicon oxide depositing source and coated film

Details Silicon oxide depositing source and coated film Silicon oxide depositing source and coated film

1994-07-15

1996-07-02

Nakarani, D. S.

Stock material or miscellaneous articles

Composite

Of silicon containing

75252, 1062861, 1062871, 106482, 4272481, 427452, 427567, 501154, B32B 904, C09D 100

Patent

active

055320635

ABSTRACT:
A silicon oxide depositing source is a mixture of a metallic silicon powder and a silicon dioxide powder. Both the powders are finely divided to a mean particle size of up to 20 .mu.m. They are mixed to give an oxygen to silicon atom ratio between 1.2:1 and 1.7:1. The source is adapted to be evaporated by an electron beam heating technique, allows the power of an electron beam to be increased without a splash phenomenon, and eventually deposits a silicon oxide thin film having transparency and improved barrier properties.

REFERENCES:
patent: 5085904 (1992-02-01), Deak et al.
Patent Abstracts of Japan, vol. 016, No. 194 (C-0938) 11 May 1992 & JP-A-04 028 858 (Mitsubishi Heavy Ind Ltd.) 31 Jan. 1992.

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