Silicon oxide depositing method

Details Silicon oxide depositing method Silicon oxide depositing method

1989-12-28

1991-08-06

Tung, T.

Chemistry: electrical and wave energy

Processes and products

Processes of treating materials by wave energy

427 51, 427 531, 427 541, 427 55, 427255, 4272553, 437238, C23C 1624

Patent

active

050375148

ABSTRACT:
An improved method for forming a silicon oxide layer is shown. In the method, Si.sub.2 Cl.sub.6 is used as silicon oxide gas of the process gas. The silicon oxide layer is formed with a very low density of natural oxide which has been removed by free chlorine atoms, a byproduct of the process.

REFERENCES:
patent: 3490961 (1970-01-01), Frieser et al.
patent: 4239811 (1980-12-01), Kemlage
patent: 4371587 (1983-02-01), Peters
patent: 4539221 (1985-09-01), Jacob et al.
patent: 4631199 (1986-12-01), Hall et al.
patent: 4683147 (1987-07-01), Eguchi
patent: 4759947 (1988-07-01), Ishihara
Bell et al., "Calculation of Heats of Formation and Dissociation of Methyl- and Chloro-Substituted Disilanes", J. Phys. Chem., vol. 86, pp. 3922-3925 (1982).

Affiliated with

Also associated with

Rating

Silicon oxide depositing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon oxide depositing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon oxide depositing method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1984847