Silicon-on-sapphire body with conductive paths therethrough

Details Silicon-on-sapphire body with conductive paths therethrough Silicon-on-sapphire body with conductive paths therethrough

1980-11-07

1984-03-13

James, Andrew J.

Electricity: conductors and insulators

Feedthrough or bushing

Compression

357 55, 357 65, 174 685, H01L 2906, H01L 2348

Patent

active

044371098

ABSTRACT:
Electrically conductive paths are provided for the high-speed low-loss transfer of electrical signals between integrated circuits of a single silicon-on-sapphire body or between integrated circuits of several silicon-on-sapphire bodies. The conductive paths through the silicon-on-sapphire bodies are made by a process involving implantation of a conductive material in laser-drilled holes.

REFERENCES:
patent: 3323198 (1967-06-01), Shortes
patent: 4050756 (1977-09-01), Moore
T. R. Anthony and P. A. Lindner, "The Reverse Laser Drilling of Transparent Materials", Journal of Applied Physics, vol. 51, No. 11, (1980), pp. 5970-5975.
Lasers in Industry, edited by S. S. Charschan (Van Norstrand Reinhold Co., 1972, p. 247).

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