Silicon-on-insulator technique with buried gap

Details Silicon-on-insulator technique with buried gap Silicon-on-insulator technique with buried gap

1994-08-05

1995-11-14

Fourson, George

Fishing, trapping, and vermin destroying

437 24, 437927, H01L 2176

Patent

active

054666309

ABSTRACT:
An silicon-on-insulator (SOI) isolation structure of a silicon substrate, which has a buried gap between active regions and the substrate, and supporting pillars formed of an insulating material to support the active regions. The buried gap is formed by etching an implanted buried silicon nitride layer. Since the dielectric constant of the buried gap is about 1, the dielectric effect and isolating effect of this structure are greatly improved.

REFERENCES:
patent: 5232866 (1993-08-01), Beyer et al.

Affiliated with

Also associated with

Rating

Silicon-on-insulator technique with buried gap does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon-on-insulator technique with buried gap, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon-on-insulator technique with buried gap will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1220669