Silicon-on-insulator substrates annealed in polysilicon tube

Details Silicon-on-insulator substrates annealed in polysilicon tube Silicon-on-insulator substrates annealed in polysilicon tube

1988-02-18

1989-02-14

Chaudhuri, O.

Fishing, trapping, and vermin destroying

437 25, 437 26, 437247, 148 333, 373111, 432261, H01L 21425, F27D 706, C21D 900

Patent

active

048046337

ABSTRACT:
A silicon-on-insulator substrate having a very low threading dislocation density is made by implanting oxygen ions into a silicon substrate while heating the substrate to form a layer of silicon dioxide buried in the silicon substrate and annealing the implanted substrate at high temperature in a novel furnace incorporating a polysilicon tube to constrain the annealing temperature to be uniform over the entire substrate. The silicon-on-insulator substrate is particularly useful for the manufacture of semiconductor devices formed in thin silicon films.

REFERENCES:
patent: 3867497 (1975-02-01), Teich et al.
patent: 4040849 (1977-08-01), Greskovich et al.
Izumi et al., Electron. Lett. 14, 593 (1978).
Lam et al., J. Cryst. Growth 63, 546 (1985).
Stoemenos et al., J. Cryst., Growth 73, 546 (1985).
Celler et al., Appl. Phys. Lett. 48, 532 (1986).

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