Silicon on insulator substrate with improved insulation patterns

Details Silicon on insulator substrate with improved insulation patterns Silicon on insulator substrate with improved insulation patterns

1997-12-12

1999-10-19

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including high voltage or high power devices isolated from...

257506, 257500, 257328, 257329, 257341, H01L 2900

Patent

active

059694017

ABSTRACT:
The present invention provides a silicon-on-insulator substrate comprising a first silicon substrate, a second silicon substrate bonded to the first silicon substrate, a plurality of insulation film patterns formed on a plurality of first type regions of an interface between the first and second silicon substrate, so that the first and second silicon substrates on the plurality of first type regions are indirectly bonded through the plurality of insulation film patterns while the first and second silicon substrates on a plurality of second type regions are directly bonded to each other, wherein each of the plurality of first type regions is bounded on all sides by the plurality of second type regions while each of the plurality of second type regions is bounded on all sides by the plurality of first type regions.

REFERENCES:
patent: 5461253 (1995-10-01), Tsuruta et al.
patent: 5844294 (1998-12-01), Kikuchi et al.

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