Silicon-on-insulator structure and semiconductor pressure detect

Details Silicon-on-insulator structure and semiconductor pressure detect Silicon-on-insulator structure and semiconductor pressure detect

1996-05-13

1997-10-14

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Non-single crystal, or recrystallized, material with...

257 75, 257415, 257417, 257469, 257507, 7351434, 73721, 73727, 73DIG4, H01L 2982

Patent

active

056775482

ABSTRACT:
A semiconductor-on-insulator structure includes a single crystal semiconductor substrate, an insulating layer on the single crystal semiconductor substrate, a recrystallized single crystal semiconductor layer on the insulating layer and having a subgrain, i.e., quasi grain boundary and a highly doped region including the quasi grain boundary and having a higher dopant impurity concentration than other parts of the single crystal semiconductor layer. Thus, a non-uniformity in the resistance is suppressed without reducing the piezoresistance effect of the structure.

REFERENCES:
patent: 4053207 (1977-10-01), Keve et al.
patent: 4822752 (1989-04-01), Sugahara et al.
patent: 5471086 (1995-11-01), Ipposhi et al.
patent: 5525434 (1996-06-01), Nashimoto

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