Semiconductor device manufacturing: process – Including control responsive to sensed condition – Interconnecting plural devices on semiconductor substrate
Reexamination Certificate
2005-03-08
2005-03-08
Elms, Richard (Department: 2824)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Interconnecting plural devices on semiconductor substrate
C438S005000, C257S326000, C257S314000
Reexamination Certificate
active
06864104
ABSTRACT:
A silicon-on-insulator (SOI) memory device (such as an SRAM) using negative differential resistance (NDR) elements is disclosed. Body effect performances for NDR FETs (and other FETs) that may be used in such device are enhanced by floating a body of some/all the NDR FETs.
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Beyer Hoffman & Harms LLP
Elms Richard
Harms Jeanette S.
Menz Doug
Progressant Technologies, Inc.
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