Silicon-on-insulator (SOI) hybrid transistor device structure

Details Silicon-on-insulator (SOI) hybrid transistor device structure Silicon-on-insulator (SOI) hybrid transistor device structure

1998-07-24

2000-10-17

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257133, 257134, H01L 3300, H01L 2974, H01L 31111

Patent

active

061335916

ABSTRACT:
A silicon-on-insulator (SOI) hybrid transistor device structure includes a substrate, a buried insulating layer on the substrate, and a hybrid transistor device structure formed in a semiconductor surface layer on the buried insulating layer. The hybrid transistor device structure may advantageously include at least one MOS transistor structure and at least one conductivity modulation transistor structure electrically connected in parallel. In a particularly advantageous configuration, the MOS transistor structure may be an LDMOS transistor structure and the conductivity modulation transistor structure may be an LIGB transistor structure, with the hybrid transistor device being formed in a closed geometry configuration. This closed geometry configuration may have both substantially curved segments and substantially straight segments, with MOS structures being formed in the curved segments and conductivity modulation transistor structures being formed in the straight segments. Hybrid transistor device structures in accordance with the invention feature excellent operating characteristics in high current, high voltage circuit applications, and in particular in source-follower circuit applications.

REFERENCES:
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patent: 5276339 (1994-01-01), Fujishima
patent: 5412241 (1995-05-01), Merchant
patent: 5455442 (1995-10-01), Neilson et al.
patent: 5838026 (1998-11-01), Kitagawa et al.
patent: 5869850 (1999-02-01), Endo et al.
patent: 5969387 (1999-10-01), Letavic et al.

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