Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal
Reexamination Certificate
2005-01-04
2005-01-04
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
C257S184000, C257S187000, C257S218000, C257S222000, C257S225000, C257S231000, C257S257000, C257S258000, C257S290000, C257S291000, C257S292000, C257S433000, C257S461000, C257S462000
Reexamination Certificate
active
06838301
ABSTRACT:
Active pixel sensors for a high quality imager are fabricated using a silicon-on-insulator (SOI) process by integrating the photodetectors on the SOI substrate and forming pixel readout transistors on the SOI thin-film. The technique can include forming silicon islands on a buried insulator layer disposed on a silicon substrate and selectively etching away the buried insulator layer over a region of the substrate to define a photodetector area. Dopants of a first conductivity type are implanted to form a signal node in the photodetector area and to form simultaneously drain/source regions for a first transistor in at least a first one of the silicon islands. Dopants of a second conductivity type are implanted to form drain/source regions for a second transistor in at least a second one of the silicon islands. Isolation rings around the photodetector also can be formed when dopants of the second conductivity type are implanted. Interconnections among the transistors and the photodetector are provided to allow signals sensed by the photodetector to be read out via the transistors formed on the silicon islands.
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Pain Bedabrata
Zheng Xinyu
California Institute of Technology
Fish & Richardson P.C.
Louie Wai-Sing
Pham Long
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