Silicon-on-insulator sense amplifier for memory cell

Miscellaneous active electrical nonlinear devices – circuits – and – Specific signal discriminating without subsequent control – By amplitude

Reexamination Certificate

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Reexamination Certificate

active

10906036

ABSTRACT:
A silicon-on-insulator (SOI) sense amplifier for sensing bit values stored in a memory cell, includes first and second input field effect transistors (FETs), connected to first and second cross-coupled CMOS inverter FET pairs. The input FETs are implemented as floating body FETs, which decreases gate capacitances and increases sense operation speed. History effect problems are minimized as threshold voltage differences are kept small.

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Marshall, A. et al., SOI Design: Analog, Memory and Digital Techniques, ISBN 0-7923-7640-4, Chapter 8.6, pp. 197-200.
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Bernstein, K. et al., SOI Circuit Desing Concepts, ISBN 0-7923-7762-1, Chapter 6.4, pp. 124-128.

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