Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Having only two terminals and no control electrode – e.g.,...
Reexamination Certificate
2007-05-29
2007-05-29
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Having only two terminals and no control electrode , e.g.,...
C257S113000, C257S133000, C257SE21388, C257S146000
Reexamination Certificate
active
10840792
ABSTRACT:
Disclosed herein is an improved thyristor-based memory cell. In one embodiment, the cell is formed in a floating substrate using Silicon-On-Insulator (SOI) technology. The cell preferably incorporates a lateral thyristor formed entirely in the floating substrate, and which is gated by a second word line. The cathode of the thyristor also comprises a source of an access transistor, whose drain is connected to the bit line of the device, and which is gated by a first word line. A trapping layer is built into the floating substrate, and when writing to the cell, pulses are added to cause holes to be trapped on the trapping layer for a logic state ‘1’ and to cause electrons to be trapped on the trapping layer for a logic state ‘0.’ Trapping of charges on the trapping layer adds extra margin to the stored data states, prevents their degradation, and renders the cell non-volatile.
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Huynh Andy
Micro)n Technology, Inc.
Nguyen Dao H.
Wong, Cabello, Lutsch, Rutherford and Brucculeri, L.L.P.
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