Silicon on insulator process with recovery of a device layer fro

Details Silicon on insulator process with recovery of a device layer fro Silicon on insulator process with recovery of a device layer fro

1995-09-01

1999-11-16

Eisenschenk, Chris

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

On insulating substrate or layer

438368, 438370, 438371, 438473, 438510, 438517, 438545, 438526, 438542, 438914, 438967, 257347, 257607, H01L 2122, H01L 21225

Patent

active

059857285

ABSTRACT:
A silicon on insulator (SOI) process is disclosed which includes the steps of forming an etch stop layer in a starting wafer, forming an insulating layer on the etch stop layer, bonding this wafer to a handle wafer, thinning the start wafer down to the etch stop and then recovering a device layer from the etch stop layer by outgassing dopants from the etch stop layer.

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