Silicon-on-insulator metal oxide semiconductor device having con

Details Silicon-on-insulator metal oxide semiconductor device having con Silicon-on-insulator metal oxide semiconductor device having con

1990-07-10

1991-10-22

Hille, Rolf

357 42, 357 233, 357 59, H01L 2701, H01L 2702, H01L 2910, H01L 2904

Patent

active

050600354

ABSTRACT:
A field effect transistor comprises source, drain and channel regions in a semiconductor layer formed on an insulating substrate. An island-shaped semiconductor layer of a first conductivity type is formed on a major surface of the insulating substrate and isolated from the surroundings. Source and drain regions of a second conductivity type are formed spaced apart from each other in the island-shaped semiconductor layer so as to define the channel region having a part of a major surface of the island-shaped semiconductor layer as a channel surface. A gate electrode is formed on the channel surface through an insulating film. A sidewall insulating film is formed on a sidewall of other region than the source region in the island-shaped semiconductor layer. A semiconductor sidewall layer of the first conductivity type is formed on a sidewall of the island-shaped semiconductor layer corresponding to the source region and the sidewall insulating film. Potentials of the source region and the semiconductor sidewall layer are held the same. A sidewall leakage current due to a parasitic MOS transistor is reduced. A potential barrier near an end portion of the source region is stabilized and reduction of a breakdown voltage between the source and drain can be prevented. A SOI-MOS transistor having stable electrical characteristics can be obtained.

REFERENCES:
patent: 4753896 (1988-06-01), Matloubian
patent: 4969023 (1990-11-01), Svedberg
Electronics Letters, Oct. 8, 1987, vol. 23, No. 21, pp. 1162-1164.
Electronics Letters, Aug. 31, 1978, vol. 14, No. 18, pp. 593-594.

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