Silicon-on-insulator latch-up pulse-radiation detector

Details Silicon-on-insulator latch-up pulse-radiation detector Silicon-on-insulator latch-up pulse-radiation detector

2006-02-07

2006-02-07

Gagliardi, Albert (Department: 2878)

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

C250S370060

Reexamination Certificate

active

06995376

ABSTRACT:
A radiation detector formed using silicon-on-insulator technology. The radiation detector includes a silicon layer formed on an insulating substrate, wherein the silicon layer includes a PNPN structure, and a gate layer formed over the PNPN structure, wherein the gate layer includes a PN gate. Latch-up occurs in the radiation detector only in response to incident radiation.

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