Silicon-on-insulator isolation technology using liquid phase dep

Details Silicon-on-insulator isolation technology using liquid phase dep Silicon-on-insulator isolation technology using liquid phase dep

1994-03-21

1995-12-05

Fourson, George

Fishing, trapping, and vermin destroying

437245, 437 67, H01L 2176

Patent

active

054729025

ABSTRACT:
A method of forming an isolated structure on a silicon substrate having a silicon-on-insulator (SOI) structure using liquid phase deposition which is capable of selectively depositing oxide only in trenches of the substrate. Recessed field oxides are grown with the same height and leave a flat surface on a top surface of the substrate. The liquid phase deposition is performed using saturated hydrofluosilicic acid as a reactant.

REFERENCES:
patent: 4916086 (1990-04-01), Takahashi et al.
patent: 5256593 (1993-10-01), Iwai
patent: 5336634 (1994-08-01), Katayama et al.
Lan, H., "Silicon-On-Insulator by Oxygen Ion Implantation", J. Crystal Growth, 63 (1983) pp. 554-558.

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