Silicon-on-insulator device structure

Details Silicon-on-insulator device structure Silicon-on-insulator device structure

2006-03-28

2006-03-28

Tra, Quan (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

C327S427000

Reexamination Certificate

active

07019582

ABSTRACT:
A silicon-on-insulator device structure having a silicon-on-insulator substrate, a transistor and a control transistor is provided. The transistor and the control transistor are disposed on the silicon-on-insulator substrate. The transistor and the control transistor share a common source region. The drain region of the transistor is electrically connected to the main body of the transistor. By forming of a control transistor between the source terminal and the main body of the transistor and switching the control transistor on or off on demand, the silicon-on-insulator device embodies the advantages of both floating-body effect and body-tied characteristic.

REFERENCES:
patent: 6118328 (2000-09-01), Morikawa
patent: 6150869 (2000-11-01), Storino et al.
patent: 6429684 (2002-08-01), Houston

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