Silicon on insulator device having trench isolation layer...

Details Silicon on insulator device having trench isolation layer... Silicon on insulator device having trench isolation layer...

2006-02-07

2006-02-07

Luu, Chuong Anh (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S751000, C257S774000, C257S374000, C257S347000

Reexamination Certificate

active

06995447

ABSTRACT:
A silicon-on-insulator (SOI) device and a method for manufacturing the same includes a substrate, which includes a base layer, a buried oxide layer, and a semiconductor layer, and an isolation layer which is formed in a trench that defines an active region on the semiconductor layer. The trench comprises a first region having a depth smaller than the thickness of the semiconductor layer and a second region having a depth as much as the thickness of the semiconductor layer. The isolation layer includes an oxide layer and a nitride liner that are sequentially formed along the surface of the trench and a dielectric layer that fills the trench.

REFERENCES:
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patent: 6331469 (2001-12-01), Park et al.
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patent: 2002/0142585 (2002-10-01), Mandal
patent: 2003/0134499 (2003-07-01), Chen et al.

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