Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2011-05-24
2011-05-24
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S705000, C257S706000, C257S712000, C438S718000, C174S13700R, C264S647000, C361S688000
Reexamination Certificate
active
07948075
ABSTRACT:
A silicon nitride substrate having appropriately adjusted warpage and surface roughness can be obtained by mixing magnesium oxide of 3 to 4 wt % and at least one kind of rare-earth element oxide of 2 to 5 wt % with silicon nitride source material powder to form a sheet-molded body, sintering the sheet-molded body, and performing a heat treatment at a temperature of 1,550 to 1,700 degree C. with a pressure of 0.5 to 6.0 kPa with a plurality of substrates being stacked. Also, a silicon nitride circuit board and a semiconductor module using the same are provided.
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Jun. 4, 2009 Search Report issued in European Patent Application No. 09154697.8.
Kaga Youichirou
Watanabe Jun-ichi
Green Telly D
Hitachi Metals Ltd.
Oliff & Berridg,e PLC
Wilczewski Mary
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