Silicon nitride substrate, a manufacturing method of the...

Electricity: conductors and insulators – Insulators

Reexamination Certificate

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C264S647000, C361S688000

Reexamination Certificate

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07915533

ABSTRACT:
In the silicon nitride substrate concerning an embodiment of the invention, degree of in-plane orientation fa of β type silicon nitride is 0.4-0.8. Here, degree of in-plane orientation fa can be determined by the rate of the diffracted X-ray intensity in each lattice plane orientation in β type silicon nitride. As a result of research by the inventors, it turned out that both high fracture toughness and high thermal conductivity are acquired, when degree of in-plane orientation fa was 0.4-0.8. Along the thickness direction, both the fracture toughness of 6.0 MPa·m1/2or higher and the thermal conductivity of 90 W/m·K or higher can be attained.

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