Silicon nitride substrate

Details Silicon nitride substrate Silicon nitride substrate

1984-12-24

1986-08-26

McCarthy, Helen M.

Compositions: ceramic

Ceramic compositions

Refractory

264 65, 428428, C04B 3558

Patent

active

046083545

ABSTRACT:
A densified silicon nitride/magnesium oxide article which can be used as a substrate for a silicon device such as an integrated circuit chip is made by a unique process which imparts to the densified article of the combined properties of high relative density, low relative dielectric constant, low dielectric loss tangent, high thermal conductivity, thermal expansion coefficient matched to that of silicon, and a high modulus of rupture without hot pressing.

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Kuriyama, M. et al, "Thermal Conductivity of Si.sub.3 N.sub.4 by the Laser Flash Method", Proc. 5th Intnl. Conf. on Thermal Anal., Heyden & Sons, London, pp. 325-328 (1977).
Giachello, A. et al, Sintering of Silicon Nitride in a Powder Bed, J. Mat. Sci., 14(1979), pp. 2825-2830.
Thorp, J. T. et al, Dielectric Properties of Some Hot-Pressed Nitrogen Ceramics, J. Mat. Sci., 12(1977), pp. 2274-2280.
Mitomo, M. et al, Thermal Conductivity of .alpha.-Sialon Ceramics, J. Matl. Sci. Letters, 3(1984), pp. 915-916.
Toshiba Corporation, Nitride Ceramics Apr. 1984.
XI et al., "The Heat Conduction Behavior of Hot-Pressed Si.sub.3 N.sub.4 Related to Processing Conditions and Microstructure," Trans. J. Br. Ceram. Soc., 82(1983), pp. 175-177.

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