Silicon nitride sintered material and production process...

Details Silicon nitride sintered material and production process... Silicon nitride sintered material and production process...

2005-02-01

2005-02-01

Kopec, Mark (Department: 1751)

Compositions

Electrically conductive or emissive compositions

Carbide containing

C252S521300, C501S092000, C501S097400, C219S270000

Reexamination Certificate

active

06849207

ABSTRACT:
A silicon nitride sintered material containing a silicon nitride component and silicon carbide having an average particle size of 1 μm or less in an amount of at least 1 mass % and less than 4 mass %, based on 100 mass % of the silicon nitride component. The carbide is dispersed in the silicon nitride component, and the silicon nitride sintered material has a thermal expansion coefficient of at least 3.7 ppm/° C. between room temperature and 1,000° C. The silicon nitride component contains a rare earth element in an amount of 15-25 mass % as reduced to a certain oxide thereof and Cr in an amount of 5-10 mass % as reduced to a certain oxide thereof, and a crystalline phase is present in intergrain regions of the sintered material.

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European Search Report for EP 01 31 0900 dated Mar. 25, 2002.

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