Silicon nitride sintered body and process for producing the same

Details Silicon nitride sintered body and process for producing the same Silicon nitride sintered body and process for producing the same

1992-10-05

1994-01-04

Derrington, James

Plastic and nonmetallic article shaping or treating: processes

Including step of generating heat by friction

264 66, 501 97, 501 98, C04B 3558

Patent

active

052757722

ABSTRACT:
The present invention relates to a silicon nitride sintered body [wherein the composition of Si.sub.3 N.sub.4 -first aid (Y.sub.2 O.sub.3 +MgO)-second aid (at least one of Al.sub.2 O.sub.3 and AlN)] falls within a range defined by lines joining points A, B, C and D in FIG. 1, the crystal phase of the sintered body contains both .alpha.-Si.sub.3 N.sub.4 and .beta.'-sialon, and the relative density is 98% or more. This sintered body is produced by subjecting a green compact of the above-described source to primary sintering in a nitrogen gas atmosphere at 1300 to 1700.degree. C. so that the relative density reaches 96% or more, and the precipitation ratio of the .alpha.-Si.sub.3 N.sub.4 crystal phases to the .beta.'-sialon crystal phase in the sintered body is in the range of from 40:60 to 80:20; and then subjecting the primary sintered body to secondary sintering in a nitrogen gas atmosphere at 1300 to 1700.degree. C. so that the relative density reaches 98% or more. The sintered body has superior strength properties, especially at ordinary temperatures, and can be produced with a high productivity in a high yield at a low cost.

REFERENCES:
patent: 3969125 (1976-07-01), Komeyzu
patent: 4978645 (1990-12-01), Ukyo

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