Silicon nitride sintered body and method for producing same

Details Silicon nitride sintered body and method for producing same Silicon nitride sintered body and method for producing same

1990-11-15

1992-05-19

Group, Karl

Compositions: ceramic

Ceramic compositions

Refractory

501 97, 501 98, 264 66, C04B 3558

Patent

active

051148889

ABSTRACT:
Silicon nitride base sintered body consists of: 1 to 20 wt % (as oxides) of at least one of rare earth elements; 0.5 to 8 wt % of V (as V.sub.2 O.sub.5); 0.5 to 8 wt % (as oxides) of at least one of Nb, Ta, Cr, Mo and W; sum of the Va and VIa group elements according to the Periodic Table of the International Version (as oxides) being 1 to 10 wt %; and balance silicon nitride. It has high strength of 690-880 MPa (70-90 kgf/mm.sup.2) and high oxidation resistance both at 1350.degree. C. It is produced by 2 stage gas-pressure sintering in pressurized N.sub.2 atmosphere, primarily at 1700.degree.-1900.degree. C. at 1 MPa (10 atm) or less and secondarily at 1600.degree.-1900 C. at 10 MPa (100 atm) or above.

REFERENCES:
patent: 4407970 (1983-10-01), Komatsu et al.
patent: 4609633 (1986-09-01), Fukuhara et al.
patent: 4746636 (1988-05-01), Yokoyama
patent: 4920085 (1990-04-01), Yoshida et al.
patent: 4977112 (1990-12-01), Matsui
patent: 4978645 (1990-12-01), Ukyo et al.

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