Chemistry of inorganic compounds – Silicon or compound thereof – Binary compound
Patent
1990-09-04
1991-07-09
Chaudhuri, Olik
Chemistry of inorganic compounds
Silicon or compound thereof
Binary compound
501 97, C01B 21068, C01B 2100
Patent
active
050304348
ABSTRACT:
Si.sub.3 N.sub.4 powders having a total oxygen content of less than 1.8% by weight with the proportion of surface oxygen content of more than 65% of the total oxygen content, and having a fluorine content of less than 35 ppm are prepared by annealing Si.sub.3 N.sub.4 powders having a total oxygen content of less than or equal to 0.4% by weight in an oxygen-containing atmosphere at temperatures of 700.degree. C. to 1200.degree. C. for 15 to 90 minutes or by grinding Si.sub.3 N.sub.4 powders having a total oxygen content of less than or equal to 0.4% by weight in water, alcohol or aqueous alcohol 15 to 120 minutes.
REFERENCES:
patent: 4284432 (1981-08-01), Nishida et al.
patent: 4341874 (1982-07-01), Nishida et al.
Oxygen Distribution in Silicon Nitride Powders, Chapman and Hall Ltd., London, 1987, pp. 3717-3720.
Zusammenfassung Nr. 107-117860z, Columbus, Ohio, 1987, Chemical Abstracts.
High-Temperature Behavior of Chemically Treated Silicon Nitride Powders, 1988, pp. C-183-C-184.
Controlling the Oxygen Content of Si.sub.3 N.sub.4 Powders, Columbus, Ohio, 1980, pp. 1155-1156.
Probleme der Feinstpulverherstellung fur Mechanokeramik durch Mechanische Aufbereitung, Freiburg, 1988, p. 92, in German only, no translation.
Imamura et al., Eng. Sci. Proc. 7; 828-838 (1986).
Franz Gerhard
Laubach Benno
Pitzer Ulrike
Bayer Aktiengesellschaft
Chaudhuri Olik
Horton Kenneth
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