Silicon nitride powders of low isoelectric point and processes f

Details Silicon nitride powders of low isoelectric point and processes f Silicon nitride powders of low isoelectric point and processes f

1990-09-04

1991-11-19

Chaudhuri, Olik

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

501 97, C01B 21068

Patent

active

050664735

ABSTRACT:
Silicon nitride powder having a total oxygen content of less than 1.8% by weight and an isoelectric point in 0.001M aqueous KNO.sub.3 solution of below pH 4 is prepared by calcining Si.sub.3 N.sub.4 powder having an oxygen content of 0.4% by weight or less in an oxygen containing atmosphere at temperatures between 700.degree. and 1200.degree. C. for 15 to 90 minutes or by grinding such as Si.sub.3 N.sub.4 powder in water, lower alcohol or a water/alcohol mixture for 15 to 120 minutes.

REFERENCES:
patent: 4284432 (1981-08-01), Nishida et al.
patent: 4341874 (1982-07-01), Nishida et al.
Ceramic Transactions "Dispersions of Silicon Nitride Powders in an Aqueous Medium", 1988, vol. 1, pp. 477-484.
M. J. Crimp et al.; "Science of Ceramic Chemical Processing", 1986 pp. 539-549, Colloids Behavior of Silicon Carbide and Silicon Nitrides.
"Controlling the Oxygen Content of Si.sub.3 N.sub.4 Powders", C. Greskovich et al., Schenectady, N.Y., 1980, pp. 1155-1156.
"Probleme der Feinstpulverherstellung fur Mechanokeramik durch Mechanische Aufbereitung" 1988.
C. Greskovich, S. Prochazka, and J. H. Rosolowski, "Basic Research on Technology Development for Sintered Ceramics", Tech. Rep. No. AFML TR-76-179 General Electric Co., Schenectady, N.Y., 1976.

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